 | | | |
| PartNumber | BSZ110N06NS3 G | BSZ110N08NS5ATMA1 | BSZ110N06NS3GATMA1 |
| Description | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 80V 40A TSDSON-8 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | PG-TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 80 V | - |
| Id Continuous Drain Current | 20 A | 40 A | - |
| Rds On Drain Source Resistance | 11 mOhms | 11 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.1 W | 50 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | OptiMOS 3 | OptiMOS 5 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 6 ns | 3 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 77 ns | 3 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | 15 ns | - |
| Typical Turn On Delay Time | 10 ns | 9 ns | - |
| Part # Aliases | BSZ110N06NS3GATMA1 BSZ11N6NS3GXT SP000453676 | BSZ110N08NS5 SP001154280 | BSZ110N06NS3 BSZ11N6NS3GXT G SP000453676 |
| Unit Weight | 0.003210 oz | 0.005503 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 2.2 V | - |
| Qg Gate Charge | - | 15 nC | - |
| Forward Transconductance Min | - | 17 S | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ110N06NS3 G | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | |
| BSZ110N08NS5ATMA1 | MOSFET N-Ch 80V 40A TSDSON-8 | ||
| BSZ110N06NS3GATMA1 | MOSFET N-CH 60V 20A TSDSON-8 | ||
| BSZ110N08NS5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 80V 40A TSDSON-8 | ||
Infineon Technologies |
BSZ110N06NS3GATMA1 | MOSFET MV POWER MOS | |
| BSZ110N06NS3GXT | Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ110N06NS3GATMA1) | ||
| BSZ110N06NS3G | 全新原裝 | ||
| BSZ110N08NS5 | N-CH 80V 40A 11mOhm SON-8FL | ||
| BSZ115N03CSC | 全新原裝 | ||
| BSZ115N03M | 全新原裝 | ||
| BSZ115N03MSC | 全新原裝 | ||
| BSZ115N03MSC G | MOSFET N-KANAL POWER MOS | ||
| BSZ110N06NS3GATMA1-CUT TAPE | 全新原裝 | ||
| BSZ110N06NS3 G | IGBT Transistors MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 |