 |  | |
| PartNumber | BTS244ZE3062AATMA2 | BTS244ZE3043AKSA2 |
| Description | MOSFET N-Ch 55V 19A D2PAK-4 | MOSFET N-Ch 55V 19A TO220-5 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | Through Hole |
| Package / Case | TO-263-5 | TO-220-5 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V |
| Id Continuous Drain Current | 19 A | 19 A |
| Rds On Drain Source Resistance | 13 mOhms | 13 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.6 V | 1.6 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 85 nC | 85 nC |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 170 W | 170 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Tube |
| Height | 4.4 mm | 15.65 mm |
| Length | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 25 S | 25 S |
| Fall Time | 25 ns | 25 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 70 ns | 70 ns |
| Factory Pack Quantity | 1000 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | 40 ns |
| Typical Turn On Delay Time | 15 ns | 15 ns |
| Part # Aliases | BTS244Z E3062A SP000910844 | BTS244Z E3043 SP000969782 |
| Unit Weight | 0.056438 oz | 0.105822 oz |
| Series | - | BTS244 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BTS244ZE3062AATMA2 | MOSFET N-Ch 55V 19A D2PAK-4 | |
| BTS244ZE3043AKSA2 | MOSFET N-Ch 55V 19A TO220-5 | ||
| BTS244ZE3062AATMA2 | MOSFET N-Ch 55V 19A D2PAK-4 | ||
| BTS244ZE3043AKSA2 | MOSFET N-Ch 55V 19A TO220-5 | ||
| BTS244ZE3040 | 全新原裝 | ||
| BTS244ZE3043 | Power Field-Effect Transisto | ||
| BTS244ZE3062A | Power Field-Effect Transistor, 35A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BTS244ZE3062AATMA1 | Power Field-Effect Transisto | ||
| BTS244ZE3062ANTMA1 | - Bulk (Alt: BTS244ZE3062ANTMA1) | ||
| BTS244ZE3062ANTMA118 | 全新原裝 | ||
| BTS244ZE3062ANTMA1180 | 全新原裝 |