BUK652

BUK652R0-30C,127 vs BUK652R1-30C,127 vs BUK652R3-40C,127

 
PartNumberBUK652R0-30C,127BUK652R1-30C,127BUK652R3-40C,127
DescriptionMOSFET N-CH 30V 120A TO220ABMOSFET N-CH 30V 120A TO220ABMOSFET N-CH 40V 120A TO220AB
製造商 型號 描述 RFQ
NXP Semiconductors
NXP Semiconductors
BUK652R0-30C,127 MOSFET N-CH 30V 120A TO220AB
BUK652R1-30C,127 MOSFET N-CH 30V 120A TO220AB
BUK652R3-40C,127 MOSFET N-CH 40V 120A TO220AB
BUK652R6-40C,127 MOSFET N-CH 40V 120A TO220AB
BUK652R7-30C,127 MOSFET N-CH 30V 100A TO220AB
BUK652R0-30C 全新原裝
BUK652R0-30C127 Now Nexperia BUK652R0-30C - Power Field-Effect Transistor, 120A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUK652R1-30C127 Now Nexperia BUK652R1-30C - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUK652R3-40C MOSFET,N CH,40V,120A,SOT78
BUK652R3-40C127 Now Nexperia BUK652R3-40C - Power Field-Effect Transistor, 120A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUK652R6-40C127 Now Nexperia BUK652R6-40C - Power Field-Effect Transistor, 100A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUK652R7-30C127 Now Nexperia BUK652R7-30C - Power Field-Effect Transistor, 100A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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