BUK7675-55

BUK7675-55A,118 vs BUK7675-55 vs BUK7675-55A

 
PartNumberBUK7675-55A,118BUK7675-55BUK7675-55A
DescriptionMOSFET TAPE13 PWR-MOS
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current20.3 A--
Rds On Drain Source Resistance75 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation62 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height4.5 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width9.4 mm--
BrandNexperia--
Fall Time40 ns--
Product TypeMOSFET--
Rise Time50 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time10 ns--
Part # Aliases/T3 BUK7675-55A--
Unit Weight0.050375 oz--
製造商 型號 描述 RFQ
Nexperia
Nexperia
BUK7675-55A,118 MOSFET TAPE13 PWR-MOS
BUK7675-55A,118 RF Bipolar Transistors MOSFET TAPE13 PWR-MOS
BUK7675-55A118 Now Nexperia BUK7675-55A - Power Field-Effect Transistor, 20.3A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK7675-55 全新原裝
BUK7675-55A 全新原裝
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