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| PartNumber | BUK7Y15-60EX | BUK7Y153-100EX | BUK7Y15-100EX |
| Description | MOSFET N-channel 60 V 15 mo FET | MOSFET N-channel 100 V 153 mo FET | MOSFET N-channel 60 V 15 mOhm MOSFET |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | LFPAK56-5 | LFPAK56-5 | LFPAK56-5 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 100 V | 100 V |
| Id Continuous Drain Current | 53 A | 9.4 A | 68 A |
| Rds On Drain Source Resistance | 9.6 mOhms | 104 mOhms | 10 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 25.41 nC | 9.4 nC | 54.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 94 W | 37.3 W | 195 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 10.9 ns | 4.5 ns | 24 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9.9 ns | 4.8 ns | 21 ns |
| Factory Pack Quantity | 1500 | 1500 | 1500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17.8 ns | 7.8 ns | 43 ns |
| Typical Turn On Delay Time | 7.4 ns | 4 ns | 11 ns |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
BUK7Y15-60EX | MOSFET N-channel 60 V 15 mo FET | |
| BUK7Y153-100EX | MOSFET N-channel 100 V 153 mo FET | ||
| BUK7Y15-100EX | MOSFET N-channel 60 V 15 mOhm MOSFET | ||
| BUK7Y15-100EX | Darlington Transistors MOSFET N-channel 60 V 15 mOhm MOSFET | ||
| BUK7Y15-60EX | IGBT Transistors MOSFET N-channel 60 V 15 mo FET | ||
| BUK7Y153-100EX | IGBT Transistors MOSFET N-channel 100 V 153 mo FET | ||
| BUK7Y153-100E115 | Now Nexperia BUK7Y153-100E - Power Field-Effect Transistor, 9.4A I(D), 100V, 0.153ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | ||
| BUK7Y15-100E115 | - Bulk (Alt: BUK7Y15-100E115) | ||
| BUK7Y15-60E,115 | 全新原裝 |