BUK9614-5

BUK9614-55A,118 vs BUK9614-55A118 vs BUK9614-55

 
PartNumberBUK9614-55A,118BUK9614-55A118BUK9614-55
DescriptionMOSFET TAPE13 PWR-MOSNow Nexperia BUK9614-55A Power Field-Effect Transistor, 73A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
ManufacturerNexperia-PHILIPS
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current73 A--
Rds On Drain Source Resistance13 mOhms--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation149 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height4.5 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width9.4 mm--
BrandNexperia--
Fall Time125 ns--
Product TypeMOSFET--
Rise Time152 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time166 ns--
Typical Turn On Delay Time26 ns--
Part # Aliases/T3 BUK9614-55A--
製造商 型號 描述 RFQ
Nexperia
Nexperia
BUK9614-55A,118 MOSFET TAPE13 PWR-MOS
BUK9614-55A,118 RF Bipolar Transistors MOSFET TAPE13 PWR-MOS
BUK9614-55A118 Now Nexperia BUK9614-55A Power Field-Effect Transistor, 73A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
BUK9614-55 全新原裝
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