| PartNumber | BUL654 | BUL642D2G |
| Description | Bipolar Transistors - BJT HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR | Bipolar Transistors - BJT BIP NPN 3A 825V |
| Manufacturer | STMicroelectronics | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 400 V | 440 V |
| Collector Base Voltage VCBO | 700 V | 825 V |
| Emitter Base Voltage VEBO | 9 V | 11 V |
| Maximum DC Collector Current | 12 A | 11 A |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | BUL654 | - |
| Height | 9.15 mm | 9.28 mm (Max) |
| Length | 10.4 mm | 10.28 mm (Max) |
| Packaging | Tube | - |
| Width | 4.6 mm | 4.82 mm (Max) |
| Brand | STMicroelectronics | ON Semiconductor |
| Continuous Collector Current | 12 A | 3 A |
| DC Collector/Base Gain hfe Min | 15 | 16 |
| Pd Power Dissipation | 80000 mW | 75 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | 1 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Collector Emitter Saturation Voltage | - | 1.5 V |
| Gain Bandwidth Product fT | - | 13 MHz |