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| PartNumber | BULB49DT4 | BULB49D |
| Description | Bipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor | |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | D2PAK-3 | - |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 450 V | - |
| Collector Base Voltage VCBO | 850 V | - |
| Emitter Base Voltage VEBO | 10 V | - |
| Maximum DC Collector Current | 5 A | 5 A |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | BULB49D | BULB49D |
| Height | 4.6 mm (Max) | - |
| Length | 10.4 mm (Max) | - |
| Packaging | Reel | Reel |
| Width | 9.35 mm (Max) | - |
| Brand | STMicroelectronics | - |
| Pd Power Dissipation | 80000 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | Transistors | - |
| Unit Weight | 0.070548 oz | 0.070548 oz |
| Package Case | - | D2PAK |
| Pd Power Dissipation | - | 80000 mW |
| Collector Emitter Voltage VCEO Max | - | 450 V |
| Collector Base Voltage VCBO | - | 850 V |
| Emitter Base Voltage VEBO | - | 10 V |
| DC Collector Base Gain hfe Min | - | 10 |