BULD118D

BULD118D-1 vs BULD118D vs BULD118D1

 
PartNumberBULD118D-1BULD118DBULD118D1
DescriptionBipolar Transistors - BJT PTD HIGH VOLTAGE
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-251-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max400 V--
Collector Base Voltage VCBO700 V--
Emitter Base Voltage VEBO9 V--
Maximum DC Collector Current2 A2 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBULD118DBULD118D-
Height6.2 mm--
Length6.6 mm--
Width2.4 mm--
BrandSTMicroelectronics--
Pd Power Dissipation20000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.012102 oz0.012102 oz-
Packaging-Tube-
Package Case-TO-251-3 Short Leads, IPak, TO-251AA-
Mounting Type-Through Hole-
Supplier Device Package-TO-251-
Power Max-20W-
Transistor Type-NPN-
Current Collector Ic Max-2A-
Voltage Collector Emitter Breakdown Max-400V-
DC Current Gain hFE Min Ic Vce-10 @ 500mA, 5V-
Vce Saturation Max Ib Ic-1.5V @ 400mA, 2A-
Current Collector Cutoff Max-250μA-
Frequency Transition---
Pd Power Dissipation-20000 mW-
Collector Emitter Voltage VCEO Max-400 V-
Collector Base Voltage VCBO-700 V-
Emitter Base Voltage VEBO-9 V-
DC Collector Base Gain hfe Min-10-
製造商 型號 描述 RFQ
STMicroelectronics
STMicroelectronics
BULD118D-1 Bipolar Transistors - BJT PTD HIGH VOLTAGE
BULD118D-1 Bipolar Transistors - BJT IGBT & Power Bipola
BULD118D 全新原裝
BULD118D1 全新原裝
BULD118DB Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, Plastic/Epoxy, 3 Pin
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