 | |  | |
| PartNumber | BUZ30A H | BUZ30A | BUZ30A E3045A |
| Description | MOSFET N-Ch 200V 21A TO220FP-3 | MOSFET N-Ch 200V 21A TO220-3 | MOSFET N-CH 200V 21A TO-263 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | GaN | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 21 A | 21 A | - |
| Rds On Drain Source Resistance | 100 mOhms | 130 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | - | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 125 W | 125 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | SIPMOS | - | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | 15.65 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | BUZ30 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.4 mm | 4.4 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 6 S | - | - |
| Fall Time | 90 ns | 90 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 70 ns | 70 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 250 ns | 250 ns | - |
| Typical Turn On Delay Time | 30 ns | 30 ns | - |
| Part # Aliases | BUZ30AHXKSA1 BUZ3AHXK SP000682990 | BUZ30AXK | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BUZ30A H | MOSFET N-Ch 200V 21A TO220FP-3 | |
| BUZ30A | MOSFET N-CH 200V 21A TO-220AB | ||
| BUZ30A E3045A | MOSFET N-CH 200V 21A TO-263 | ||
| BUZ30A H | Darlington Transistors MOSFET N-Ch 200V 21A TO220FP-3 | ||
Infineon Technologies |
BUZ30A | MOSFET N-Ch 200V 21A TO220-3 | |
| BUZ172 | MOSFET Transistor, P-Channel, TO-220AB | ||
| BUZ173 | 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220 | ||
| BUZ18 | 全新原裝 | ||
| BUZ201 | 全新原裝 | ||
| BUZ202 | 全新原裝 | ||
| BUZ205 | 全新原裝 | ||
| BUZ206 | 全新原裝 | ||
| BUZ21 SMD | 全新原裝 | ||
| BUZ21/L | 全新原裝 | ||
| BUZ210 | 全新原裝 | ||
| BUZ211 | 全新原裝 | ||
| BUZ213 | 全新原裝 | ||
| BUZ214 | 全新原裝 | ||
| BUZ215 | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| BUZ216 | 全新原裝 | ||
| BUZ21E3045A | 全新原裝 | ||
| BUZ21L | MOSFET Transistor, N-Channel, TO-220AB | ||
| BUZ22 | MOSFET Transistor, N-Channel, TO-220AB | ||
| BUZ22 E3045A | 全新原裝 | ||
| BUZ22-E3046 | 全新原裝 | ||
| BUZ23 | 全新原裝 | ||
| BUZ230 | 全新原裝 | ||
| BUZ24 | MOSFET Transistor, N-Channel, TO-204AE | ||
| BUZ25 | POWER FIELD-EFFECT TRANSISTOR, 19A I(D), 100V, 0.1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-3 | ||
| BUZ250A | 全新原裝 | ||
| BUZ2520DX | 全新原裝 | ||
| BUZ261 | 全新原裝 | ||
| BUZ27 | 全新原裝 | ||
| BUZ271 | Power Field-Effect Transistor, 22A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| BUZ28 | 全新原裝 | ||
| BUZ280AFI | 全新原裝 | ||
| BUZ282 | 全新原裝 | ||
| BUZ30 | 全新原裝 | ||
| BUZ304 | 全新原裝 | ||
| BUZ305+ | 全新原裝 | ||
| BUZ307 | 3 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | ||
| BUZ307 , MMBZ27VC | 全新原裝 | ||
| BUZ308 | 全新原裝 | ||
| BUZ30A , MMBD4148T | 全新原裝 | ||
| BUZ30A H SMD | 全新原裝 | ||
| BUZ20 | MOSFET Transistor, N-Channel, TO-220AB | ||
| BUZ272 | MOSFET Transistor, P-Channel, TO-220AB | ||
| BUZ305 | 全新原裝 | ||
| BUZ21 | Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| BUZ22E3045A | Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) TO-263 T/R |