 | |  | |
| PartNumber | BUZ32 | BUZ32 H | BUZ32 E3045A |
| Description | MOSFET N-Ch 200V 9.5A TO220-3 | MOSFET N-Ch 200V 9.5A TO220-3 | MOSFET N-CH 200V 9.5A D2PAK |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | GaN | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 9.5 A | 9.5 A | - |
| Rds On Drain Source Resistance | 400 mOhms | 400 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 75 W | 75 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | 15.65 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.4 mm | 4.4 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 30 ns | 30 nS | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 40 ns | 40 nS | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 55 ns | 55 nS | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | BUZ32XK | BUZ32HXKSA1 SP000682998 | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Tradename | - | OptiMOS | - |
| Series | - | BUZ32 | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BUZ32 | MOSFET N-Ch 200V 9.5A TO220-3 | |
| BUZ32 H | MOSFET N-Ch 200V 9.5A TO220-3 | ||
Infineon Technologies |
BUZ32 | MOSFET N-CH 200V 9.5A TO220AB | |
| BUZ32 E3045A | MOSFET N-CH 200V 9.5A D2PAK | ||
| BUZ32H3045AATMA1 | MOSFET N-CH 200V 9.5A TO-263 | ||
| BUZ32 H | IGBT Transistors MOSFET N-Ch 200V 9.5A TO220-3 | ||
| BUZ32 E3045 | 全新原裝 | ||
| BUZ32 H3045A | MOSFET N-Ch 200V 9.5A TO220-3 | ||
| BUZ32 L3045A | MOSFET N-Ch 200V 9.5A TO220FP-3 | ||
| BUZ32 SMD | 全新原裝 | ||
| BUZ323 | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | ||
| BUZ325 | 全新原裝 | ||
| BUZ325 , MMBZ20VA | 全新原裝 | ||
| BUZ326 | 全新原裝 | ||
| BUZ328 | 全新原裝 | ||
| BUZ32A | 全新原裝 | ||
| BUZ32E3045 | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUZ32E3045A | 全新原裝 | ||
| BUZ32H | 全新原裝 | ||
| BUZ32H3045A | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA | ||
| BUZ32H3045A(BUZ32H) | 全新原裝 | ||
| BUZ32HXKSA1 | - Bulk (Alt: BUZ32HXKSA1) | ||
| BUZ32L3045A | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUZ32H3045ABUZ32H | 全新原裝 |