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| PartNumber | CGH40180PP | CGH40180P | CGH40180PP-TB |
| Description | RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt | BOARD DEMO AMP CIRCUIT CGH40180 | |
| Manufacturer | Cree, Inc. | Cree | Cree Inc. |
| Product Category | RF JFET Transistors | IC Chips | IC Chips |
| RoHS | Y | - | - |
| Transistor Type | HEMT | HEMT | - |
| Technology | GaN | GaN SiC | - |
| Gain | 19 dB | 19 dB | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 10 V to 2 V | - | - |
| Id Continuous Drain Current | 24 A | - | - |
| Output Power | 220 W | 220 W | - |
| Maximum Drain Gate Voltage | - | - | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | - | - | - |
| Mounting Style | Screw Mount | Screw | - |
| Package / Case | 440199 | - | - |
| Packaging | Tube | Tube | Bulk |
| Application | - | - | - |
| Configuration | Dual | Dual | - |
| Height | 4.34 mm | - | - |
| Length | 29 mm | - | - |
| Operating Frequency | 1 GHz to 2.5 GHz | 1 GHz to 2.5 GHz | - |
| Operating Temperature Range | - | - | - |
| Product | GaN HEMT | - | Demonstration Boards |
| Width | 5.97 mm | - | - |
| Brand | Wolfspeed / Cree | - | - |
| Forward Transconductance Min | - | - | - |
| Gate Source Cutoff Voltage | - | - | - |
| Number of Channels | 2 Channel | - | - |
| Class | - | - | - |
| Development Kit | CGH40180PP-TB | CGH40180PP-TB | - |
| Fall Time | - | - | - |
| NF Noise Figure | - | - | - |
| P1dB Compression Point | - | - | - |
| Product Type | RF JFET Transistors | - | - |
| Rds On Drain Source Resistance | - | - | - |
| Rise Time | - | - | - |
| Factory Pack Quantity | 100 | - | - |
| Subcategory | Transistors | - | - |
| Typical Turn Off Delay Time | - | - | - |
| Vgs th Gate Source Threshold Voltage | - 3 V | - | - |
| Package Case | - | 440199 | - |
| Pd Power Dissipation | - | - | - |
| Id Continuous Drain Current | - | 24 A | - |
| Vds Drain Source Breakdown Voltage | - | 120 V | - |
| Vgs th Gate Source Threshold Voltage | - | - 3 V | - |
| Rds On Drain Source Resistance | - | - | - |
| Forward Transconductance Min | - | - | - |
| Vgs Gate Source Breakdown Voltage | - | - 10 V to + 2 V | - |
| NF Noise Figure | - | - | - |
| P1dB Compression Point | - | - | - |
| For Use With Related Products | - | - | CGH40180 |
| Series | - | - | GaN |
| Type | - | - | HEMT |
| For Use With | - | - | CGH40180PP |
| Frequency | - | - | 2.5GHz |
| Supplied Contents | - | - | Partially Populated Board - Main IC Not Included |
| Operating Supply Voltage | - | - | 28 V |
| Description Function | - | - | Demonstration board for CGH40180PP |
| Tool Is For Evaluation Of | - | - | CGH40180PP |
| Interface Type | - | - | - |
| Dimensions | - | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
N/A |
CGH40180PP | RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt | |
| CGH40180PP-TB | BOARD DEMO AMP CIRCUIT CGH40180 | ||
| CGH40180PP | RF JFET Transistors DC-2.5GHz 28V 180W Gain 19dB GaN HEMT | ||
| CGH40180P | 全新原裝 | ||
| CGH40180PP/F 4G 180-220 | 全新原裝 |