 | |  | |
| PartNumber | CLF1G0060-30U | CLF1G0060-10U | CLF1G0060S-10 |
| Description | RF JFET Transistors Broadband RF power GaN HEMT | RF JFET Transistors Broadband RF power GaN HEMT | - Bulk (Alt: CLF1G0060S-10) |
| Manufacturer | - | - | NXP Semiconductors |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Packaging | - | - | Tube |
| Mounting Style | - | - | SMD/SMT |
| Operating Temperature Range | - | - | - 65 C to + 150 C |
| Package Case | - | - | SOT1227B |
| Technology | - | - | GaN Si |
| Configuration | - | - | Single |
| Transistor Type | - | - | HEMT |
| Gain | - | - | 14.5 dB |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 65 C |
| Operating Frequency | - | - | 3.5 GHz |
| Id Continuous Drain Current | - | - | 1.7 A |
| Vds Drain Source Breakdown Voltage | - | - | 150 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 2 V |
| Transistor Polarity | - | - | N-Channel |
| Forward Transconductance Min | - | - | 380 mS |
| Vgs Gate Source Breakdown Voltage | - | - | 3 V |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
NXP Semiconductors |
CLF1G0060S-10U | RF JFET Transistors Broadband RF power GaN HEMT | |
| CLF1G0060S-10U | RF JFET Transistors Broadband RF power GaN HEMT | ||
| CLF1G0060-30U | RF JFET Transistors Broadband RF power GaN HEMT | ||
| CLF1G0060S-30U | RF JFET Transistors Broadband RF power GaN HEMT | ||
| CLF1G0060-10U | RF JFET Transistors Broadband RF power GaN HEMT | ||
| CLF1G0060S-10 | - Bulk (Alt: CLF1G0060S-10) | ||
| CLF1G0060-10 | 全新原裝 | ||
| CLF1G0060S-10UAMPLEON-CS | 全新原裝 | ||
| CLF1G0060S-30 | 全新原裝 |