 |  | | |
| PartNumber | CMLT3906E | CMLT3906E T/R | CMLT3906E-TR |
| Description | Bipolar Transistors - BJT PNP Complementary Enhanced | ||
| Manufacturer | Central Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 40 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.1 V | - | - |
| Maximum DC Collector Current | 0.2 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | CMLT39 | - | - |
| Height | 0.58 mm | - | - |
| Length | 1.6 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.2 mm | - | - |
| Brand | Central Semiconductor | - | - |
| Continuous Collector Current | 0.45 A | - | - |
| DC Collector/Base Gain hfe Min | 90 | - | - |
| Pd Power Dissipation | 350 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | CMLT3906E TR | - | - |
| Unit Weight | 0.000106 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Central Semiconductor |
CMLT3906EG TR | Bipolar Transistors - BJT PNP Complementary Enhanced | |
| CMLT3906E | Bipolar Transistors - BJT PNP Complementary Enhanced | ||
| CMLT3906E T/R | 全新原裝 | ||
| CMLT3906E-TR | 全新原裝 | ||
| CMLT3906EG | 全新原裝 | ||
| CMLT3906EGTR PB-FREE | 全新原裝 | ||
| CMLT3906ETR | 全新原裝 | ||
| CMLT3906E | Bipolar Transistors - BJT PNP Complementary Enhanced | ||
Central Semiconductor |
CMLT3906E TR | TRANS PNP 60V 0.2A SOT563 | |
| CMLT3906EG TR | TRANS 2PNP 40V 0.2A SOT563 |