 | |  | |
| PartNumber | CSD18540Q5B | CSD18540Q5BT | CSD18541F5 |
| Description | MOSFET 60V, N-channel NexFET Pwr MOSFET | MOSFET 60V,NCh NexFET Pwr MOSFET | MOSFET 60V, N ch NexFET MOSFETG , single LGA 1.5 x 0.8mm, 65mOhm 3-PICOSTAR -55 to 150 |
| Manufacturer | Infineon | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | VSON-CLIP-8 | PICOSTAR-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 60 V | 60 V |
| Id Continuous Drain Current | 90 A | 205 A | 2.2 A |
| Rds On Drain Source Resistance | 5.3 mOhms | 2.2 mOhms | 65 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 1.5 V | 1.75 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
| Qg Gate Charge | 52 nC | 41 nC | 11 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
| Pd Power Dissipation | 150 W | 188 W | 500 mW (1/2 W) |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | NexFET | PicoStar |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 1 mm | 0.35 mm |
| Length | 6.5 mm | 6 mm | 1.53 mm |
| Series | OptiMOS 3 | CSD18540Q5B | CSD18541F5 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 5 mm | 0.77 mm |
| Brand | Infineon Technologies | Texas Instruments | Texas Instruments |
| Forward Transconductance Min | 56 S | 116 S | - |
| Fall Time | 10 ns | 3 ns | 496 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 66 ns | 9 ns | 540 ns |
| Factory Pack Quantity | 2500 | 250 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 38 ns | 20 ns | 1076 ns |
| Typical Turn On Delay Time | 18 ns | 6 ns | 572 ns |
| Part # Aliases | G IPD053N08N3 SP001127818 | - | - |
| Unit Weight | 0.139332 oz | 0.000847 oz | 0.000025 oz |
| Development Kit | - | BOOSTXL-DRV8305EVM, DRV8704EVM | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Texas Instruments |
CSD18543Q3AT | MOSFET 60V, N ch NexFET MOSFETG , single SON3x3, 9.9mOhm 8-VSONP -55 to 150 | |
| CSD18543Q3A | MOSFET 60V, N ch NexFET MOSFETG , single SON3x3, 9.9mOhm 8-VSONP -55 to 150 | ||
| CSD18542KTT | MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 4mOhm 3-DDPAK/TO-263 -55 to 175 | ||
| CSD18542KTTT | MOSFET 60V N-Channel NexFET Pwr MOSFET | ||
| CSD18540Q5B | MOSFET 60V, N-channel NexFET Pwr MOSFET | ||
| CSD18540Q5BT | MOSFET 60V,NCh NexFET Pwr MOSFET | ||
| CSD18542KCS | MOSFET 60V N-channel NexFET Power MOSFET | ||
| CSD18541F5T | MOSFET 60V, N ch NexFET MOSFETG , single LGA 1.5 x 0.8mm, 65mOhm 3-PICOSTAR -55 to 150 | ||
| CSD18541F5 | MOSFET 60V, N ch NexFET MOSFETG , single LGA 1.5 x 0.8mm, 65mOhm 3-PICOSTAR -55 to 150 | ||
| CSD18542KTTT | MOSFET N-CH 60V 200A D2PAK | ||
| CSD18543 | 全新原裝 | ||
| CSD18543Q3 | 全新原裝 | ||
| CSD18543Q3AT | 60V N-CHANNEL NEXFET POWER MOSF | ||
| CSD18541F5T | MOSFET N-CH 60V 2.2A PICOSTAR | ||
| CSD18540Q5B | Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R | ||
| CSD18541F5 | Trans MOSFET N-CH 60V 2.2A 3-Pin PICOSTAR T/R | ||
| CSD18542KCS | Trans MOSFET N-CH 60V 200A 3-Pin(3+Tab) TO-220 Tube | ||
| CSD18542KTT | Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R | ||
| CSD18543Q3A | 60V N CH MOSFET |