 |  | | |
| PartNumber | CSD86330Q3D | CSD86330Q3D/BKN | CSD86330Q3DTI |
| Description | MOSFET Sync Buck NexFET Pwr Block MOSFET | ||
| Manufacturer | Texas Instruments | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | LSON-CLIP-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
| Vgs Gate Source Voltage | 5 V | - | - |
| Qg Gate Charge | 4.8 nC, 9.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 6 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | NexFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.5 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | CSD86330Q3D | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Texas Instruments | - | - |
| Forward Transconductance Min | 52 S, 82 S | - | - |
| Development Kit | CSD86330EVM-717, TPS40322EVM-679 | - | - |
| Fall Time | 1.9 ns, 4.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.5 ns, 6.3 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 8.5 ns, 15.8 ns | - | - |
| Typical Turn On Delay Time | 4.9 ns, 5.3 ns | - | - |
| Unit Weight | 0.002254 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Texas Instruments |
CSD86330Q3D | MOSFET Sync Buck NexFET Pwr Block MOSFET | |
| CSD86330Q3D/BKN | 全新原裝 | ||
| CSD86330Q3DTI | 全新原裝 | ||
| CSD86330Q3D | Synchronous Buck Power Block 8-Pin SON EP T/R |