 |  | | |
| PartNumber | CY7C1062G30-10BGXI | CY7C1062GE30-10BGXI | CY7C1062G30-10BGXIT |
| Description | SRAM 16Mb Fast SRAM With ECC | SRAM 16Mb Fast SRAM With ECC | SRAM Async SRAMS |
| Manufacturer | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Product Category | SRAM | SRAM | SRAM |
| RoHS | Y | Y | Y |
| Memory Size | 16 Mbit | 16 Mbit | 16 Mbit |
| Organization | 512 k x 32 | 512 k x 32 | 512 k x 32 |
| Access Time | 10 ns | 10 ns | 10 ns |
| Maximum Clock Frequency | 110 MHz | - | - |
| Interface Type | Parallel | Parallel | Parallel |
| Supply Voltage Max | 3.6 V | 3.6 V | 3.6 V |
| Supply Voltage Min | 2.2 V | 2.2 V | 2.2 V |
| Supply Current Max | 110 mA | 110 mA | 110 mA |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PBGA-119 | PBGA-119 | PBGA-119 |
| Packaging | Tray | Tray | Reel |
| Memory Type | SDR | Volatile | Volatile |
| Series | CY7C1062G/GE | CY7C1062G/GE | CY7C1062G/GE |
| Type | SRAM | Asynchronous | Asynchronous |
| Brand | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 84 | 84 | 500 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Unit Weight | 0.034771 oz | 0.034771 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Cypress Semiconductor |
CY7C1062G30-10BGXI | SRAM 16Mb Fast SRAM With ECC | |
| CY7C1062GE30-10BGXI | SRAM 16Mb Fast SRAM With ECC | ||
| CY7C1062GN30-10BGXI | SRAM ASYNC SRAMS | ||
| CY7C1062G30-10BGXIT | SRAM Async SRAMS | ||
| CY7C1062GE30-10BGXIT | SRAM Async SRAMS | ||
| CY7C1062GN30-10BGXIT | SRAM ASYNC SRAMS | ||
| CY7C1062G30-10BGXI | 全新原裝 | ||
| CY7C1062GE30-10BGXIT | 全新原裝 | ||
| CY7C1062G30-10BGXIT | 全新原裝 | ||
| CY7C1062GN30-10BGXI | 全新原裝 | ||
| CY7C1062GN30-10BGXIT | 全新原裝 | ||
| CY7C1062GE30-10BGXI | SRAM 16Mb Fast SRAM With ECC |