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| PartNumber | D3S190N65B-U | D3S190N65E-T | D3S18 |
| Description | MOSFET 190 mOhm 650V Superjunction Power MOSFET in TO-220 | MOSFET 190 mOhm 650V | |
| Manufacturer | D3 Semiconductor | D3 Semiconductor | EUPEC |
| Product Category | MOSFET | MOSFET | Module |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 18.5 A | - | - |
| Rds On Drain Source Resistance | 180 mOhms | 190 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | 2.3 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 32.6 nC | 28 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 146 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | D3 | D3 | - |
| Fall Time | 33 ns | 21 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | 8 ns | - |
| Factory Pack Quantity | 50 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 51 ns | 57 ns | - |
| Typical Turn On Delay Time | 21 ns | 9 ns | - |
| Unit Weight | 0.063493 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
D3 |
D3S190N65B-U | MOSFET 190 mOhm 650V Superjunction Power MOSFET in TO-220 | |
| D3S190N65E-T | MOSFET 190 mOhm 650V | ||
| D3S190N65F-U | MOSFET 190 mOhm 650V Superjunction Power MOSFET in TO-220 FullPak | ||
| D3S18 | 全新原裝 |