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| PartNumber | DDB6U25N16VRBOMA1 | DDB6U25N16VR-ENG | DDB6U25N16VR |
| Description | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel | IGBT Modules N-CH 1.2KV 25A | |
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | IGBTs - Modules |
| Product | - | - | IGBT Silicon Modules |
| Packaging | - | - | Bulk |
| Mounting Style | - | - | Screw |
| Package Case | - | - | EASY750 |
| Configuration | - | - | Single |
| Maximum Operating Temperature | - | - | + 125 C |
| Minimum Operating Temperature | - | - | - 40 C |
| Collector Emitter Voltage VCEO Max | - | - | 1200 V |
| Continuous Collector Current at 25 C | - | - | 25 A |
| Maximum Gate Emitter Voltage | - | - | +/- 20 V |