 |  |  | |
| PartNumber | DMB2227A-7 | DMB53D0UV-7 | DMB53D0UDW-7 |
| Description | Bipolar Transistors - BJT 300mW +/-600mA | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | MOSFET N-CHANNEL NPN ENHANCEMENT MODE |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-26-6 | SOT-563-6 | SOT-363-6 |
| Transistor Polarity | NPN, PNP | N-Channel, NPN | N-Channel |
| Configuration | Dual | Single | Single |
| Collector Emitter Voltage VCEO Max | 40 V, 60 V | - | - |
| Collector Base Voltage VCBO | 60 V, 75 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 0.6 A | - | - |
| Gain Bandwidth Product fT | 200 MHz, 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | DMB2227 | DMB53D | DMB53D |
| Height | 1.1 mm | - | - |
| Length | 3 mm | - | - |
| Packaging | Reel | Reel | Reel |
| Width | 1.6 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| DC Collector/Base Gain hfe Min | 35 | - | - |
| Pd Power Dissipation | 300 mW | 250 mW | 250 mW |
| Product Type | BJTs - Bipolar Transistors | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | MOSFETs | MOSFETs |
| Unit Weight | 0.001058 oz | 0.000106 oz | 0.000212 oz |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Vds Drain Source Breakdown Voltage | - | 50 V | 50 V |
| Id Continuous Drain Current | - | 160 mA | 160 mA |
| Rds On Drain Source Resistance | - | 3.1 Ohms | 5 Ohms |
| Vgs th Gate Source Threshold Voltage | - | 700 mV | - |
| Vgs Gate Source Voltage | - | 12 V | 12 V |
| Channel Mode | - | Enhancement | Enhancement |
| Product | - | MOSFET Small Signal | MOSFET Small Signal |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Forward Transconductance Min | - | 180 mS | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMB2227A-7 | Bipolar Transistors - BJT 300mW +/-600mA | |
| DMB53D0UV-7 | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | ||
| DMB54D0UDW-7 | MOSFET PNP/NMOS | ||
| DMB53D0UDW-7 | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | ||
| DMB54D0UV-7 | MOSFET PNP/NMOS | ||
Crydom |
DMB3 | Solid State Relays - Industrial Mount 3-Phase RHP Din-Rail Bracket | |
| DMB3 | Solid State Relays - Industrial Mount 3-Phase RHP Din-Rail Bracket | ||
Bel |
DMB3W-123 | Switching Power Supplies DIN-RAIL KIT HZZ00602 | |
| DMB2227A-7 | Bipolar Transistors - BJT 300mW +/-600mA | ||
| DMB54D0UV-7 | Darlington Transistors MOSFET PNP/NMOS | ||
| DMB53D0UDW-7 | Darlington Transistors MOSFET N-CHANNEL NPN ENHANCEMENT MODE | ||
| DMB53D0UV-7 | IGBT Transistors MOSFET N-CHANNEL NPN ENHANCEMENT MODE | ||
| DMB54D0UDW-7 | MOSFET PNP/NMOS | ||
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