 | | |
| PartNumber | DMG1013UWQ-7 | DMG1013UW-7 |
| Description | MOSFET MOSFET BVDSS: | MOSFET P-Ch -20V VDSS Enchanced Mosfet |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-323-3 | SOT-323-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 820 mA | 820 mA |
| Rds On Drain Source Resistance | 1.5 Ohms | 750 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 500 mV |
| Vgs Gate Source Voltage | 6 V | 4.5 V |
| Qg Gate Charge | 622.4 pC | 622.4 pC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 310 mW | 0.31 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Reel |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 0.9 S | - |
| Fall Time | 20.7 ns | 20.7 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 8.1 ns | 8.1 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28.4 ns | 28.4 ns |
| Typical Turn On Delay Time | 5.1 ns | 5.1 ns |
| Unit Weight | 0.000176 oz | 0.000176 oz |
| Product | - | MOSFET Small Signal |
| Series | - | DMG1013 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG1013UWQ-7 | MOSFET MOSFET BVDSS: | |
| DMG1013UW-7 | MOSFET P-Ch -20V VDSS Enchanced Mosfet | ||
| DMG1013UWQ-7 | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | ||
| DMG1013UW-7 | IGBT Transistors MOSFET P-Ch -20V VDSS Enchanced Mosfet | ||
| DMG1013UW | 全新原裝 | ||
| DMG1013UW-7-F | 全新原裝 | ||
| DMG1013UW-7-F MP | 全新原裝 | ||
| DMG1013UW-7-CUT TAPE | 全新原裝 |