 | |  | |
| PartNumber | DMG6301UDW-7 | DMG6301UDW-13 | DMG6301UDW-7-F |
| Description | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
| Id Continuous Drain Current | 240 mA | 240 mA | - |
| Rds On Drain Source Resistance | 3.8 Ohms | 3.8 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 850 mV | 850 mV | - |
| Vgs Gate Source Voltage | 8 V | 8 V | - |
| Qg Gate Charge | 360 pC | 360 pC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 370 mW | 370 mW | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMG6301 | DMG6301 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | 1 S | 1 S | - |
| Fall Time | 2.3 ns | 2.3 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 1.8 ns | 1.8 ns | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 6.6 ns | 6.6 ns | - |
| Typical Turn On Delay Time | 2.9 ns | 2.9 ns | - |
| Unit Weight | 0.000212 oz | 0.000212 oz | - |
| Tradename | - | PowerDI | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG6301UDW-7 | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | |
| DMG6301UDW-13 | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | ||
| DMG6301UDW-7-F | 全新原裝 | ||
| DMG6301UDW-13 | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | ||
| DMG6301UDW-7 | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W |