DMN10H170SFG

DMN10H170SFG-7 vs DMN10H170SFG-13 vs DMN10H170SFGQ-13

 
PartNumberDMN10H170SFG-7DMN10H170SFG-13DMN10H170SFGQ-13
DescriptionMOSFET N-Ch Enh Mode FET 100Vdss 20VgssMOSFET N-Ch Enh Mode FET 100Vdss 20VgssMOSFET MOSFET BVDSS: 61V-100V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V100 V
Id Continuous Drain Current2.9 A8.5 A3.7 A
Rds On Drain Source Resistance122 mOhms99 mOhms133 mOhms
Vgs th Gate Source Threshold Voltage3 V1 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge14.9 nC14.9 nC14.9 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2 W2 W2 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMN10DMN10-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min4.4 S--
Fall Time3.4 ns3.4 ns3.4 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time2.3 ns2.3 ns2.3 ns
Factory Pack Quantity200030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time13.9 ns13.9 ns13.9 ns
Typical Turn On Delay Time4.4 ns4.4 ns4.4 ns
Unit Weight0.002540 oz--
Qualification--AEC-Q101
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DMN10H170SFG-7 MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss
DMN10H170SFGQ-7 MOSFET MOSFET BVDSS: 61V-100V
DMN10H170SFG-13 MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss
DMN10H170SFGQ-13 MOSFET MOSFET BVDSS: 61V-100V
DMN10H170SFG 全新原裝
DMN10H170SFG-13 MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss
DMN10H170SFG-7 MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss
Top