 |  |  | |
| PartNumber | DMN2016UTS-13 | DMN2016UFX-7 | DMN2016UTS |
| Description | MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS | MOSFET MOSFET | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TSSOP-8 | V-DFN2050-4 | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 8.58 A | - | - |
| Rds On Drain Source Resistance | 16.5 mOhms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 880 mW | - | - |
| Configuration | Dual | - | Dual |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Product | MOSFET Small Signal | - | - |
| Series | DMN2016 | - | DMN2016 |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 16.27 ns | - | 16.27 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11.66 ns | - | 11.66 ns |
| Factory Pack Quantity | 2500 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 59.38 ns | - | 59.38 ns |
| Typical Turn On Delay Time | 10.39 ns | - | 10.39 ns |
| Unit Weight | 0.005573 oz | - | 0.005573 oz |
| Package Case | - | - | 8-TSSOP (0.173", 4.40mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-TSSOP |
| FET Type | - | - | 2 N-Channel (Dual) Common Drain |
| Power Max | - | - | 880mW |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 1495pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 8.58A |
| Rds On Max Id Vgs | - | - | 14.5 mOhm @ 9.4A, 4.5V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 16.5nC @ 4.5V |
| Pd Power Dissipation | - | - | 880 mW |
| Vgs Gate Source Voltage | - | - | 8 V |
| Id Continuous Drain Current | - | - | 8.58 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 16.5 mOhms |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN2016UTS-13 | MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS | |
| DMN2016UFX-7 | MOSFET MOSFET | ||
| DMN2016UTS | 全新原裝 | ||
| DMN2016UTS-13 | Trans MOSFET N-CH 20V 5.58A Automotive 8-Pin TSSOP T/R | ||
| DMN2016UTS-13-CUT TAPE | 全新原裝 |