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| PartNumber | DMN3018SSS-13 | DMN3018SSS | DMN3018SSS-13-F |
| Description | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOIC-8 | - | - |
| Number of Channels | 1 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 7.3 A | - | - |
| Rds On Drain Source Resistance | 21 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 13.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.7 W | - | - |
| Configuration | Single | Dual Dual Drain | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | DMN3018 | DMN3018 | - |
| Transistor Type | 1 N-Channel | 2 N-Channel | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 4.1 ns | 4.1 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.4 ns | 4.4 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20.1 ns | 20.1 ns | - |
| Typical Turn On Delay Time | 4.3 ns | 4.3 ns | - |
| Unit Weight | 0.002610 oz | 0.002610 oz | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SO | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 1.4W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 697pF @ 15V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 7.3A (Ta) | - |
| Rds On Max Id Vgs | - | 21 mOhm @ 10A, 10V | - |
| Vgs th Max Id | - | 2.1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 13.2nC @ 10V | - |
| Pd Power Dissipation | - | 1.7 W | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Id Continuous Drain Current | - | 9.7 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.1 V | - |
| Rds On Drain Source Resistance | - | 35 mOhms | - |
| Qg Gate Charge | - | 6 nC | - |
| Forward Transconductance Min | - | 8.3 S | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN3018SSS-13 | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | |
| DMN3018SSS | 全新原裝 | ||
| DMN3018SSS-13-F | 全新原裝 | ||
| DMN3018SSS-13 | IGBT Transistors MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K |