DMN30H4

DMN30H4D0L-7 vs DMN30H4D0L-13 vs DMN30H4D0LFDE-13

 
PartNumberDMN30H4D0L-7DMN30H4D0L-13DMN30H4D0LFDE-13
DescriptionMOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31WMOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31WMOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3U-DFN2020-E-6
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage300 V300 V-
Id Continuous Drain Current250 mA550 mA-
Rds On Drain Source Resistance4 Ohms4 Ohms-
Vgs th Gate Source Threshold Voltage1 V1.7 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge7.6 nC7.6 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation310 mW630 mW-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
PackagingReelReelReel
SeriesDMN30DMN30DMN30
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time17.5 ns17.5 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time4.7 ns4.7 ns-
Factory Pack Quantity30001000010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time25.8 ns25.8 ns-
Typical Turn On Delay Time4.9 ns4.9 ns-
Unit Weight0.000282 oz0.000282 oz0.000238 oz
Forward Transconductance Min---
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DMN30H4D1S-7 MOSFET MOSFET BVDSS: 251V~500V SOT23 T&R 3K
DMN30H4D0L-7 MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W
DMN30H4D0LFDE-7 MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET
DMN30H4D1S-13 MOSFET MOSFET BVDSS: 251V~500V SOT23 T&R 10K
DMN30H4D0L-13 MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W
DMN30H4D0LFDE-13 MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET
DMN30H4D0L-13 Trans MOSFET N-CH 300V 0.25A 3-Pin SOT-23 T/R
DMN30H4D0L-7 Trans MOSFET N-CH 300V 0.25A Automotive 3-Pin SOT-23 T/R
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