 |  | | |
| PartNumber | DMN6068LK3 | DMN6068LK3-13 | DMN6068LK3-G |
| Description | MOSFET N-CH 60V 6A DPAK | ||
| Manufacturer | - | Diodes Incorporated | - |
| Product Category | - | FETs - Single | - |
| Series | - | DMN6068 | - |
| Packaging | - | Digi-ReelR Alternate Packaging | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 1 Channel | - |
| Supplier Device Package | - | TO-252-3 | - |
| Configuration | - | Single | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 2.12W | - |
| Transistor Type | - | 1 N-Channel | - |
| Drain to Source Voltage Vdss | - | 60V | - |
| Input Capacitance Ciss Vds | - | 502pF @ 30V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 6A (Ta) | - |
| Rds On Max Id Vgs | - | 68 mOhm @ 12A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 10.3nC @ 10V | - |
| Pd Power Dissipation | - | 4.12 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 8.7 ns | - |
| Rise Time | - | 10.8 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 8.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 68 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 11.9 ns | - |
| Typical Turn On Delay Time | - | 3.6 ns | - |
| Qg Gate Charge | - | 10.3 nC | - |
| Forward Transconductance Min | - | 19.7 S | - |
| Channel Mode | - | Enhancement | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN6068LK3Q-13 | MOSFET MOSFET BVDSS: 41V-60V | |
| DMN6068LK3 | 全新原裝 | ||
| DMN6068LK3-13 | MOSFET N-CH 60V 6A DPAK | ||
| DMN6068LK3-G | 全新原裝 |