DMN6069SF

DMN6069SFGQ-13 vs DMN6069SFG-13 vs DMN6069SFG-7

 
PartNumberDMN6069SFGQ-13DMN6069SFG-13DMN6069SFG-7
DescriptionMOSFET MOSFET BVDSS: 41V-60VMOSFET 60V N-Ch Enh FET 60Vgss 25A IdmMOSFET 60V N-Ch Enh FET 60Vgss 25A Idm
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current18 A18 A18 A
Rds On Drain Source Resistance39 mOhms63 mOhms63 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge25 nC14 nC14 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2.4 W930 mW930 mW
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101--
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time3.3 ns3.3 ns3.3 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time5 ns5 ns5 ns
Factory Pack Quantity300030002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time12 ns12 ns12 ns
Typical Turn On Delay Time3.6 ns3.6 ns3.6 ns
RoHS-YY
Series-DMN6069DMN6069
Unit Weight-0.002540 oz0.002540 oz
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DMN6069SFGQ-13 MOSFET MOSFET BVDSS: 41V-60V
DMN6069SFG-13 MOSFET 60V N-Ch Enh FET 60Vgss 25A Idm
DMN6069SFG-7 MOSFET 60V N-Ch Enh FET 60Vgss 25A Idm
DMN6069SFG-7 N Channel MOSFET
DMN6069SFGQ-7 MOSFET N-CH 60V 18A POWERDI3333
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