DMN62D1

DMN62D1LFD-7 vs DMN62D1LFB-7B vs DMN62D1LFD-13

 
PartNumberDMN62D1LFD-7DMN62D1LFB-7BDMN62D1LFD-13
DescriptionMOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pFMOSFET MOSFET BVDSS: 41V~60V X1-DFN1006-3 T&R 10KMOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseX1-DFN1212-3X1-DFN1006-3X1-DFN1212-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current400 mA320 mA400 mA
Rds On Drain Source Resistance1.4 Ohms2 Ohms1.4 Ohms
Vgs th Gate Source Threshold Voltage1 V600 mV1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge550 pC0.9 nC550 pC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation500 mW (1/2 W)0.5 W500 mW (1/2 W)
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMN62D-DMN62D
Transistor Type1 N-Channel-1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time13.9 ns16.3 ns13.9 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time2.8 ns3.4 ns2.8 ns
Factory Pack Quantity30001000010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time21 ns26.4 ns21 ns
Typical Turn On Delay Time2.1 ns3.4 ns2.1 ns
Unit Weight-0.000035 oz-
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DMN62D1SFB-7B MOSFET MOSFET BVDSS
DMN62D1LFD-7 MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
DMN62D1LFB-7B MOSFET MOSFET BVDSS: 41V~60V X1-DFN1006-3 T&R 10K
DMN62D1LFD-13 MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
DMN62D1LFDQ-7 MOSFET 2N7002 Family
DMN62D1SFB-7 全新原裝
DMN62D1LFB-7B MOSFET N-CHAN 41V 60V X1-DFN1006
DMN62D1LFD-7 Darlington Transistors MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
DMN62D1SFB-7B MOSFET MOSFET BVDSS
DMN62D1LFD-13 MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
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