| PartNumber | DMNH10H028SK3Q-13 | DMNH10H028SCT | DMNH10H028SPSQ-13 |
| Description | MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A | MOSFET MOSFET BVDSS: 61V-100V | MOSFET 100V N-Ch Enh FET 175c 20Vgss 1.6W |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Package / Case | TO-252-3 | TO-220-3 | PowerDI5060-8 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 55 A | - | - |
| Rds On Drain Source Resistance | 28 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 36 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | AEC-Q101 |
| Packaging | Reel | Tube | Reel |
| Series | DMNH10H028 | - | DMNH10H028 |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 4.8 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5.8 ns | - | - |
| Factory Pack Quantity | 2500 | 50 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17.8 ns | - | - |
| Typical Turn On Delay Time | 6.4 ns | - | - |
| Unit Weight | 0.139332 oz | 0.063493 oz | 0.003386 oz |