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| PartNumber | DMP2160UFDB-7-01 | DMP2160UFDB-7-CUT TAPE | DMP2160UFDB-7 |
| Description | IGBT Transistors MOSFET 20V 3.8A DUAL P-CHAN | ||
| Manufacturer | DIODES | - | Diodes Incorporated |
| Product Category | IC Chips | - | FETs - Arrays |
| Series | - | - | DMP2160 |
| Packaging | - | - | Tape & Reel (TR) |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | 6-UDFN Exposed Pad |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 2 Channel |
| Supplier Device Package | - | - | 6-UDFN2020 (2x2) |
| Configuration | - | - | Dual |
| FET Type | - | - | 2 P-Channel (Dual) |
| Power Max | - | - | 1.4W |
| Transistor Type | - | - | 2 P-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 536pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 3.8A |
| Rds On Max Id Vgs | - | - | 70 mOhm @ 2.8A, 4.5V |
| Vgs th Max Id | - | - | 900mV @ 250μA |
| Gate Charge Qg Vgs | - | - | 6.5nC @ 4.5V |
| Pd Power Dissipation | - | - | 1.4 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 12.09 ns |
| Rise Time | - | - | 12.09 ns |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 3.8 A |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Rds On Drain Source Resistance | - | - | 70 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 55.34 ns |
| Typical Turn On Delay Time | - | - | 11.51 ns |
| Channel Mode | - | - | Enhancement |