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| PartNumber | DMP2160UW | DMP2160UW-7 , MAX6316LUK | DMP2160UW-7 |
| Description | IGBT Transistors MOSFET SINGLE P-CHANNEL | ||
| Manufacturer | DIODES | - | DIODES |
| Product Category | FETs - Single | - | FETs - Single |
| Series | - | - | DMP2160 |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Unit Weight | - | - | 0.000212 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SC-70, SOT-323 |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | SOT-323 |
| Configuration | - | - | Single |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 350mW |
| Transistor Type | - | - | 1 P-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 627pF @ 10V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 1.5A (Ta) |
| Rds On Max Id Vgs | - | - | 100 mOhm @ 1.5A, 4.5V |
| Vgs th Max Id | - | - | 900mV @ 250μA |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | - | 350 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 1.5 A |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Rds On Drain Source Resistance | - | - | 100 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Channel Mode | - | - | Enhancement |