 |  | | |
| PartNumber | DMT6012LFDF-7 | DMT6012LFV-13 | DMT6012LFDF-13 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS 41V-60V | MOSFET MOSFET BVDSS: 41V-60V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | U-DFN2020-6 | U-DFN2020-6 | U-DFN2020-6 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 9.5 A | 9.5 A | 9.5 A |
| Rds On Drain Source Resistance | 14 mOhms | 14 mOhms | 14 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 13.6 nC | 13.6 nC | 13.6 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.9 W | 11 W | 1.9 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 8.5 ns | 8.5 ns | 8.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4.4 ns | 4.4 ns | 4.4 ns |
| Factory Pack Quantity | 3000 | 3000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14.7 ns | 14.7 ns | 14.7 ns |
| Typical Turn On Delay Time | 3.2 ns | 3.2 ns | 3.2 ns |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMT6012LFDF-7 | MOSFET MOSFET BVDSS: 41V-60V | |
| DMT6012LFV-13 | MOSFET MOSFET BVDSS 41V-60V | ||
| DMT6012LFV-7 | MOSFET MOSFET BVDSS 41V-60V | ||
| DMT6012LFDF-13 | MOSFET MOSFET BVDSS: 41V-60V |