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| PartNumber | DN2625K4-G | DN2625K1 | DN2625K4 |
| Description | MOSFET 250V 3.3A | Trans MOSFET N-CH Si 250V 1.1A 3-Pin(2+Tab) DPAK T/R | |
| Manufacturer | Microchip | - | Microchip Technology |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 1.1 A | - | - |
| Rds On Drain Source Resistance | 3.5 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Configuration | Single | - | Single |
| Channel Mode | Depletion | - | Depletion |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 6.1 mm | - | - |
| Brand | Microchip Technology | - | - |
| Forward Transconductance Min | 100 mS | - | - |
| Fall Time | 20 ns | - | 20 ns |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | 20 ns |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10 ns | - | 10 ns |
| Typical Turn On Delay Time | 10 ns | - | 10 ns |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Series | - | - | - |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | TO-252, (D-Pak) |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | - |
| Drain to Source Voltage Vdss | - | - | 250V |
| Input Capacitance Ciss Vds | - | - | 1000pF @ 25V |
| FET Feature | - | - | Depletion Mode |
| Current Continuous Drain Id 25°C | - | - | 1.1A (Tj) |
| Rds On Max Id Vgs | - | - | 3.5 Ohm @ 1A, 0V |
| Vgs th Max Id | - | - | - |
| Gate Charge Qg Vgs | - | - | 7.04nC @ 1.5V |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 1.1 A |
| Vds Drain Source Breakdown Voltage | - | - | 250 V |
| Rds On Drain Source Resistance | - | - | 3.5 Ohms |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Microchip Technology |
DN2625K4-G | MOSFET 250V 3.3A | |
| DN2625K1 | 全新原裝 | ||
| DN2625K4 | Trans MOSFET N-CH Si 250V 1.1A 3-Pin(2+Tab) DPAK T/R | ||
| DN2625K4-G | MOSFET N-CH 250V 1.1A 3DPAK |