DNBT

DNBT8105-7 vs DNBT8015-7 vs DNBT8105

 
PartNumberDNBT8105-7DNBT8015-7DNBT8105
DescriptionBipolar Transistors - BJT 1A
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage500 mV--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesDNBT8--
Height1 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min30 at 2 A, 5 V--
Pd Power Dissipation300 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DNBT8105-7 Bipolar Transistors - BJT 1A
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