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DP0150AL

DP0150ALP4-7B vs DP0150ALP4-7 vs DP0150ALP4

 
PartNumberDP0150ALP4-7BDP0150ALP4-7DP0150ALP4
DescriptionBipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10KBipolar Transistors - BJT PNP 50V 0.1A 3-PIN SMT
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF
RoHSYY-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseDFN1006H4-3DFN-3-
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max- 50 V50 V-
Collector Base Voltage VCBO- 50 V50 V-
Emitter Base Voltage VEBO- 5 V5 V-
Collector Emitter Saturation Voltage- 300 mV--
Maximum DC Collector Current- 200 mA0.1 A0.1 A
Gain Bandwidth Product fT80 MHz80 MHz80 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesDP0150DP0150DP0150
PackagingReelReelReel
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current- 100 mA--
DC Collector/Base Gain hfe Min120120-
Pd Power Dissipation450 mW450 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity100003000-
SubcategoryTransistorsTransistors-
DC Current Gain hFE Max-120 at 2 mA, 6 V120 at 2 mA at 6V
Height-0.35 mm-
Length-1 mm-
Width-0.6 mm-
Package Case--DFN
Pd Power Dissipation--450 mW
Collector Emitter Voltage VCEO Max--50 V
Collector Base Voltage VCBO--50 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--120 at 2 mA at 6 V
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated 		DP0150ALP4-7B Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
DP0150ALP4-7 Bipolar Transistors - BJT PNP 50V 0.1A 3-PIN SMT
DP0150ALP4 全新原裝
DP0150ALP4-7 Bipolar Transistors - BJT PNP 50V 0.1A 3-PIN SMT
DP0150ALP4-7B Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
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