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E3M0

E3M0065090D vs E3M0120090D vs E3M0280090D

 
PartNumberE3M0065090DE3M0120090DE3M0280090D
DescriptionMOSFET 900V 65mOhms G3 SiC MOSFETMOSFET 900V 120mOhms G3 SiC MOSFETMOSFET 900V 280mOhms G3 SiC MOSFET
ManufacturerCree, Inc.Cree, Inc.Cree, Inc.
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiCSiCSiC
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage900 V900 V900 V
Id Continuous Drain Current35 A23 A11.5 A
Rds On Drain Source Resistance84.5 mOhms155 mOhms364 mOhms
Vgs th Gate Source Threshold Voltage1.7 V1.7 V1.7 V
Vgs Gate Source Voltage18 V, - 8 V18 V, - 8 V18 V, - 8 V
Qg Gate Charge30.4 nC17.3 nC9.5 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation125 W97 W54 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandWolfspeed / CreeWolfspeed / CreeWolfspeed / Cree
Forward Transconductance Min13.6 S7.7 S3.6 S
Fall Time9 ns8 ns7.5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time11 ns10 ns10 ns
Factory Pack Quantity600600600
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time23 ns25 ns17.5 ns
Typical Turn On Delay Time35 ns27 ns26 ns
製造商 型號 描述 RFQ
N/A
N/A 		E3M0065090D MOSFET 900V 65mOhms G3 SiC MOSFET
E3M0120090D MOSFET 900V 120mOhms G3 SiC MOSFET
E3M0280090D MOSFET 900V 280mOhms G3 SiC MOSFET
E3M0065090D E-SERIES 900V, 65 MOHM, G3 SIC M
E3M0120090D E-SERIES 900V, 120 MOHM, G3 SIC
E3M0280090D E-SERIES 900V, 280 MOHM, G3 SIC
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