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| PartNumber | EDB4432BBBJ-1DAIT-F-R | EDB4432BBBJ-1DAIT-F-D | EDB4432BBBJ-1DAAT-F-R TR |
| Description | DRAM LPDDR2 4G 128MX32 FBGA | DRAM LPDDR2 4G 128MX32 FBGA | IC DRAM 4G PARALLEL 134FBGA |
| Manufacturer | Micron Technology | Micron Technology | - |
| Product Category | DRAM | DRAM | - |
| RoHS | Y | Y | - |
| Type | SDRAM Mobile - LPDDR2 | SDRAM Mobile - LPDDR2 | - |
| Data Bus Width | 32 bit | 32 bit | - |
| Organization | 128 M x 32 | 128 M x 32 | - |
| Package / Case | VFBGA-134 | WFBGA-134 | - |
| Memory Size | 4 Gbit | 4 Gbit | - |
| Maximum Clock Frequency | 533 MHz | 533 MHz | - |
| Access Time | 5.5 ns | 5.5 ns | - |
| Supply Voltage Max | 1.95 V | 1.95 V | - |
| Supply Voltage Min | 1.14 V | 1.14 V | - |
| Supply Current Max | 47.6 mA | 47.6 mA | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 85 C | + 85 C | - |
| Series | EDB | EDB | - |
| Packaging | Reel | Tray | - |
| Brand | Micron | Micron | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | DRAM | DRAM | - |
| Factory Pack Quantity | 1000 | 2100 | - |
| Subcategory | Memory & Data Storage | Memory & Data Storage | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Micron |
EDB5432BEBH-1DAAT-F-R | DRAM LPDDR2 512M 16MX32 FBGA | |
| EDB4432BBBJ-1DAIT-F-R | DRAM LPDDR2 4G 128MX32 FBGA | ||
| EDB5432BEPA-1DAAT-F-R | DRAM LPDDR2 512M 16MX32 FBGA | ||
| EDB4432BBPA-1D-F-R | DRAM LPDDR2 4G 128MX32 FBGA | ||
| EDB4432BBPA-1D-F-D | DRAM LPDDR2 4G 128MX32 FBGA | ||
| EDB5432BEBH-1DIT-F-D | DRAM LPDDR2 512M 16MX32 FBGA | ||
| EDB5432BEBH-1DAAT-F-D | DRAM LPDDR2 512M 16MX32 FBGA | ||
| EDB4432BBBJ-1DAIT-F-D | DRAM LPDDR2 4G 128MX32 FBGA | ||
| EDB4432BBBJ-1DAUT-F-D | DRAM LPDDR2 4G 128MX32 FBGA | ||
| EDB5432BEPA-1DAAT-F-D | DRAM LPDDR2 512M 16MX32 FBGA | ||
| EDB4432BBBJ-1DAIT-F-D | IC DRAM 4G PARALLEL 134FBGA | ||
| EDB4432BBPA-1D-F-D | IC DRAM 4G PARALLEL 168FBGA | ||
| EDB5432BEBH-1DAAT-F-D | IC DRAM 512M PARALLEL 134VFBGA | ||
| EDB5432BEBH-1DAAT-F-R TR | IC DRAM 512M PARALLEL 134VFBGA | ||
| EDB5432BEPA-1DAAT-F-D | IC DRAM 512M PARALLEL 168WFBGA | ||
| EDB4432BBBJ-1DAAT-F-R TR | IC DRAM 4G PARALLEL 134FBGA | ||
| EDB4432BBBJ-1DAIT-F-R TR | IC DRAM 4G PARALLEL 134FBGA | ||
| EDB4432BBBJ-1DAUT-F-D | DRAM mobile-DDR2-s DRAM edb4432bbbj-1daut-f | ||
| EDB4432BBBJ-1DAUT-F-R TR | IC DRAM 4G PARALLEL 533MHZ | ||
| EDB4432BBPA-1D-F-R TR | IC DRAM 4G PARALLEL 168FBGA | ||
| EDB4432BBPE-1D-F-D | IC DRAM 4G PARALLEL 533MHZ | ||
| EDB5432BEBH-1DAUT-F-D | DRAM Chip Mobile LPDDR2 SDRAM 512Mbit 16Mx32 1.2V/1.8V 134-Pin VFBGA Dry | ||
| EDB5432BEBH-1DAUT-F-R TR | IC DRAM 512M PARALLEL 134VFBGA | ||
| EDB5432BEBH-1DIT-F-D | DRAM Chip Mobile LPDDR2 SDRAM 512Mbit 16Mx32 1.2V/1.8V 134-Pin VFBGA | ||
| EDB5432BEBH-1DIT-F-R TR | IC DRAM 512M PARALLEL 134VFBGA | ||
| EDB5432BEPA-1DAAT-F-R TR | IC DRAM 512M PARALLEL 168WFBGA | ||
| EDB5432BEPA-1DIT-F-D | IC DRAM 512M PARALLEL 168WFBGA | ||
| EDB5432BEPA-1DIT-F-R | IC DRAM 512M PARALLEL 533MHZ | ||
| EDB5432BEPA-1DIT-F-R TR | IC DRAM 512M PARALLEL 168WFBGA | ||
| EDB4432BBBJ-1DAIT-F | 全新原裝 | ||
| EDB4432BBPA-1D-F-R | LPDDR2 128MX32 PLASTIC GREEN V | ||
| EDB4432BBPC-1D-F-ES-D | LPDDR2 4G 128MX32 FBGA - Bulk (Alt: EDB4432BBPC-1D-F-ES-D) | ||
| EDB4432BBPE-1D-F | 全新原裝 | ||
| EDB4432BBPJ-1D | 全新原裝 | ||
| EDB4432BBPJ-1D-F | 全新原裝 | ||
| EDB5432BEBH-1DAAT-F | 全新原裝 | ||
| EDB5432BEBH-1DAAT-F-R | 512MB: X32 AUTOMOTIVE MOBILE LPDDR2 SDRAM | ||
| EDB5432BEBH-1DAAT-F-R T | 全新原裝 | ||
| EDB5432BEBH-1DAUT-F | 全新原裝 | ||
| EDB5432BEBH-1DAUT-F-R | DRAM Chip Mobile LPDDR2 SDRAM 512Mbit 16Mx32 1.2V/1.8V 134-Pin VFBGA T/R | ||
| EDB5432BEBH-1DIT-F-R | DRAM LPDDR2 512M 16MX32 FBGA | ||
| EDB5432BEPA-1DIT-F-RTR | 全新原裝 | ||
| EDB6064B1PB-6D-F | 全新原裝 | ||
| EDB6064B2PB-6D-F | 全新原裝 | ||
| EDB8064B2PB-8D-F | DRAM CHIP MOBILE LPDDR2 SDRAM 8G-BIT 256M X 32 1.8V 216-PIN FBGA | ||
| EDB8064B2PB-8D-F DDR2 8G | 全新原裝 | ||
| EDB8064B2PB-8D-F-D | 全新原裝 | ||
| EDB8064B2PB8DZZTFEZ | 全新原裝 | ||
| EDB8064B2PD-6D-F | 全新原裝 | ||
| EDB8064B2PH-8D-F | DDR DRAM |
