EM6K33

EM6K33T2R vs EM6K33 vs EM6K33 T2R

 
PartNumberEM6K33T2REM6K33EM6K33 T2R
DescriptionMOSFET Trans MOSFET N-CH
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseSOT-563-6--
Number of Channels2 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current200 mA--
Rds On Drain Source Resistance1.6 Ohms--
Vgs th Gate Source Threshold Voltage300 mV--
Vgs Gate Source Voltage8 V--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelTape & Reel (TR)-
SeriesEM6K33EM6K33-
Transistor Type2 N-Channel1 N-Channel-
BrandROHM Semiconductor--
Fall Time55 ns, 55 ns--
Product TypeMOSFET--
Rise Time6 ns, 6 ns--
Factory Pack Quantity8000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns, 15 ns--
Typical Turn On Delay Time4 ns, 4 ns--
Part # AliasesEM6K33--
Unit Weight0.000106 oz--
Package Case-SOT-563, SOT-666-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-EMT6-
FET Type-2 N-Channel (Dual)-
Power Max-150mW-
Drain to Source Voltage Vdss-50V-
Input Capacitance Ciss Vds-25pF @ 10V-
FET Feature-Logic Level Gate, 1.2V Drive-
Current Continuous Drain Id 25°C-200mA-
Rds On Max Id Vgs-2.2 Ohm @ 200mA, 4.5V-
Vgs th Max Id-1V @ 1mA-
Gate Charge Qg Vgs---
製造商 型號 描述 RFQ
EM6K33T2R MOSFET Trans MOSFET N-CH
EM6K33 全新原裝
EM6K33 T2R 全新原裝
EM6K33T2R MOSFET Trans MOSFET N-CH
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