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| PartNumber | EMY1T2R |
| Description | Bipolar Transistors - BJT RECOMMENDED ALT 755-VT6Z2T2R |
| Manufacturer | ROHM Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS | Y |
| Mounting Style | SMD/SMT |
| Transistor Polarity | NPN, PNP |
| Configuration | Dual |
| Collector Emitter Voltage VCEO Max | 50 V |
| Collector Base Voltage VCBO | 60 V |
| Emitter Base Voltage VEBO | 7 V |
| Maximum DC Collector Current | 0.15 A |
| Gain Bandwidth Product fT | 140 MHz, 180 MHz |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | EMY1 |
| DC Current Gain hFE Max | 120 at 1 mA, 6 V |
| Height | 0.5 mm |
| Length | 1.6 mm |
| Packaging | Reel |
| Width | 1.2 mm |
| Brand | ROHM Semiconductor |
| DC Collector/Base Gain hfe Min | 120 |
| Pd Power Dissipation | 150 mW |
| Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 8000 |
| Subcategory | Transistors |
| Part # Aliases | EMY1 |