PartNumber | FC6546010R | FC6543.1AE | FC654601 |
Description | MOSFET Nch+Nch MOSFET 2.0x2.1mm Flat lead | ||
Manufacturer | Panasonic | - | Panasonic Electronic Components |
Product Category | MOSFET | - | FETs - Arrays |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT-363-6 | - | - |
Number of Channels | 2 Channel | - | 2 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 100 mA | - | - |
Rds On Drain Source Resistance | 12 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Minimum Operating Temperature | - 40 C | - | - 40 C |
Maximum Operating Temperature | + 85 C | - | + 85 C |
Pd Power Dissipation | 150 mW | - | - |
Configuration | Dual | - | Dual |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Product | MOSFET | - | - |
Transistor Type | 2 N-Channel | - | 2 N-Channel |
Brand | Panasonic | - | - |
Forward Transconductance Min | 60 mS | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 100 ns | - | 100 ns |
Typical Turn On Delay Time | 100 ns | - | 100 ns |
Unit Weight | 0.000265 oz | - | 0.000265 oz |
Series | - | - | - |
Package Case | - | - | 6-SMD, Flat Leads |
Operating Temperature | - | - | 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | SMini6-F3-B |
FET Type | - | - | 2 N-Channel (Dual) |
Power Max | - | - | 150mW |
Drain to Source Voltage Vdss | - | - | 60V |
Input Capacitance Ciss Vds | - | - | 12pF @ 3V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 100mA |
Rds On Max Id Vgs | - | - | 12 Ohm @ 10mA, 4V |
Vgs th Max Id | - | - | 1.5V @ 1μA |
Gate Charge Qg Vgs | - | - | - |
Pd Power Dissipation | - | - | 150 mW |
Vgs Gate Source Voltage | - | - | 12 V |
Id Continuous Drain Current | - | - | 100 mA |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Vgs th Gate Source Threshold Voltage | - | - | 1.2 V |
Rds On Drain Source Resistance | - | - | 12 Ohms |
Forward Transconductance Min | - | - | 60 mS |