FC65

FC6546010R vs FC6543.1AE vs FC654601

 
PartNumberFC6546010RFC6543.1AEFC654601
DescriptionMOSFET Nch+Nch MOSFET 2.0x2.1mm Flat lead
ManufacturerPanasonic-Panasonic Electronic Components
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-363-6--
Number of Channels2 Channel-2 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current100 mA--
Rds On Drain Source Resistance12 Ohms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 85 C-+ 85 C
Pd Power Dissipation150 mW--
ConfigurationDual-Dual
Channel ModeEnhancement-Enhancement
PackagingReel-Digi-ReelR Alternate Packaging
ProductMOSFET--
Transistor Type2 N-Channel-2 N-Channel
BrandPanasonic--
Forward Transconductance Min60 mS--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time100 ns-100 ns
Typical Turn On Delay Time100 ns-100 ns
Unit Weight0.000265 oz-0.000265 oz
Series---
Package Case--6-SMD, Flat Leads
Operating Temperature--150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SMini6-F3-B
FET Type--2 N-Channel (Dual)
Power Max--150mW
Drain to Source Voltage Vdss--60V
Input Capacitance Ciss Vds--12pF @ 3V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--100mA
Rds On Max Id Vgs--12 Ohm @ 10mA, 4V
Vgs th Max Id--1.5V @ 1μA
Gate Charge Qg Vgs---
Pd Power Dissipation--150 mW
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--100 mA
Vds Drain Source Breakdown Voltage--60 V
Vgs th Gate Source Threshold Voltage--1.2 V
Rds On Drain Source Resistance--12 Ohms
Forward Transconductance Min--60 mS
製造商 型號 描述 RFQ
Panasonic
Panasonic
FC6546010R MOSFET Nch+Nch MOSFET 2.0x2.1mm Flat lead
FC6543.1AE 全新原裝
FC654601 全新原裝
Panasonic
Panasonic
FC6546010R MOSFET 2N-CH 60V 0.1A SMINI6-F3
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