FCA20N60-F

FCA20N60-F109

 
PartNumberFCA20N60-F109
DescriptionMOSFET 600V N-CH MOSFET
ManufacturerON Semiconductor
Product CategoryMOSFET
RoHSY
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3PN-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds Drain Source Breakdown Voltage600 V
Id Continuous Drain Current20 A
Rds On Drain Source Resistance190 mOhms
Vgs Gate Source Voltage30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd Power Dissipation208 W
ConfigurationSingle
Channel ModeEnhancement
PackagingTube
Height20.1 mm
Length16.2 mm
SeriesFCA20N60_F109
Transistor Type1 N-Channel
Width5 mm
BrandON Semiconductor / Fairchild
Fall Time65 ns
Product TypeMOSFET
Rise Time140 ns
Factory Pack Quantity450
SubcategoryMOSFETs
Typical Turn Off Delay Time230 ns
Typical Turn On Delay Time62 ns
Part # AliasesFCA20N60_F109
Unit Weight0.225789 oz
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCA20N60-F109 MOSFET 600V N-CH MOSFET
ON Semiconductor
ON Semiconductor
FCA20N60-F109 MOSFET N-CH 600V 20A TO-3P
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