FCP10

FCP104N60 vs FCP100810HF-4R7M-1A0 vs FCP104N60E

 
PartNumberFCP104N60FCP100810HF-4R7M-1A0FCP104N60E
DescriptionMOSFET SuperFET2 600V Fast ver
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current37 A--
Rds On Drain Source Resistance104 mOhms--
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage20 V, 30 V--
Qg Gate Charge63 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation357 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameSuperFET II--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFCP104N60--
Transistor Type1 N-Channel--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min33 S--
Fall Time3.3 ns--
Product TypeMOSFET--
Rise Time18 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time72 ns--
Typical Turn On Delay Time26 ns--
Unit Weight0.063493 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCP104N60 MOSFET SuperFET2 600V Fast ver
FCP104N60F MOSFET SF2 600V 104MOHM F TO220
FCP100810HF-4R7M-1A0 全新原裝
FCP104N60E 全新原裝
ON Semiconductor
ON Semiconductor
FCP104N60 MOSFET N-CH 600V 37A TO-220
FCP104N60F MOSFET N-CH 600V TO-220
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