FCP13

FCP130N60 vs FCP13-M20 vs FCP1350318

 
PartNumberFCP130N60FCP13-M20FCP1350318
DescriptionMOSFET SF2 600V 130MOHM F TO220
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current28 A--
Rds On Drain Source Resistance130 mOhms--
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage20 V, 30 V--
Qg Gate Charge54 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation278 W--
ConfigurationSingle--
TradenameSuperFET II--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFCP130N60--
Transistor Type1 N-Channel--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min26 S--
Fall Time4 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns--
Typical Turn On Delay Time25 ns--
Unit Weight0.063493 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCP13N60N MOSFET 600V, 13A, N-Chan
FCP130N60 MOSFET SF2 600V 130MOHM F TO220
FCP13-M20 全新原裝
FCP1350318 全新原裝
FCP13895-SEANNA-A 全新原裝
FCP13N60N,FCP25N60N 全新原裝
FCP13N60N,FCP25N60N,13N6 全新原裝
FCP13N60N,P13N60N, 全新原裝
FCP13895_SEANNA-A ASSY RND 1POS 152.6MM 79MM HT
ON Semiconductor
ON Semiconductor
FCP130N60 MOSFET N-CH 600V 28A TO220
FCP13N60N MOSFET N-CH 600V 13A TO220
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