 |  | | |
| PartNumber | FCPF190N60E | FCPF190N60E,FCPF190N60, | FCPF190N60E-F152 |
| Description | MOSFET 600V N-CHAN MOSFET | MOSFET 650V, 190mOhm SuperFET II MOSFET | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 20.6 A | - | - |
| Rds On Drain Source Resistance | 190 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Qg Gate Charge | 82 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 39 W | - | - |
| Configuration | Single | - | - |
| Tradename | SuperFET II | - | - |
| Packaging | Tube | - | - |
| Height | 16.07 mm | - | - |
| Length | 10.36 mm | - | - |
| Series | FCPF190N60E | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.9 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 20 S | - | - |
| Fall Time | 40 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 38 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 212 ns | - | - |
| Typical Turn On Delay Time | 56 ns | - | - |
| Unit Weight | 0.080072 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FCPF190N60E | MOSFET 600V N-CHAN MOSFET | |
ON Semiconductor |
FCPF190N60E | MOSFET N-CH 600V TO-220-3 | |
| FCPF190N60E,FCPF190N60, | 全新原裝 | ||
| FCPF190N60E-F152 | MOSFET 650V, 190mOhm SuperFET II MOSFET |