FCX1147A

FCX1147ATA vs FCX1147A vs FCX1147ACT

 
PartNumberFCX1147ATAFCX1147AFCX1147ACT
DescriptionBipolar Transistors - BJT PNP Low Saturation
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 12 V--
Collector Base Voltage VCBO- 15 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 400 mV--
Maximum DC Collector Current- 20 A--
Gain Bandwidth Product fT115 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFCX11--
DC Current Gain hFE Max270--
Height1.6 mm--
Length4.6 mm--
PackagingReel--
Width2.6 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 3 A--
DC Collector/Base Gain hfe Min90 at 10 A, 2 V--
Pd Power Dissipation2000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.001834 oz--
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated
FCX1147ATA Bipolar Transistors - BJT PNP Low Saturation
FCX1147ATA Bipolar Transistors - BJT PNP Low Saturation
FCX1147A 全新原裝
FCX1147ACT 全新原裝
FCX1147ATA-79 全新原裝
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