FCX558

FCX558TA vs FCX558QTA vs FCX558

 
PartNumberFCX558TAFCX558QTAFCX558
DescriptionBipolar Transistors - BJT PNP Medium PowerBipolar Transistors - BJT Pwr Hi Voltage Transistor SOT89 T&R 1K
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3SOT-89-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 400 V- 400 V-
Collector Base Voltage VCBO- 400 V- 400 V-
Emitter Base Voltage VEBO- 5 V- 7 V-
Collector Emitter Saturation Voltage- 0.5 V- 0.5 V-
Maximum DC Collector Current0.2 A- 200 mA-
Gain Bandwidth Product fT50 MHz50 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFCX55FCX558Q-
Height1.5 mm--
Length4.5 mm--
PackagingReelReel-
Width2.5 mm--
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current- 0.2 A- 200 mA-
Pd Power Dissipation1 W2 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.001834 oz0.001764 oz-
Technology-Si-
DC Current Gain hFE Max-300-
DC Collector/Base Gain hfe Min-100-
Qualification-AEC-Q101-
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated
FCX558TA Bipolar Transistors - BJT PNP Medium Power
FCX558QTA Bipolar Transistors - BJT Pwr Hi Voltage Transistor SOT89 T&R 1K
FCX558TA Bipolar Transistors - BJT PNP Medium Powe
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