FDA20N50-F

FDA20N50-F109

 
PartNumberFDA20N50-F109
DescriptionMOSFET 500V NCH
ManufacturerON Semiconductor
Product CategoryMOSFET
RoHSY
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3PN-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds Drain Source Breakdown Voltage500 V
Id Continuous Drain Current22 A
Rds On Drain Source Resistance230 mOhms
Vgs Gate Source Voltage30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd Power Dissipation280 W
ConfigurationSingle
Channel ModeEnhancement
TradenameUniFET
PackagingTube
Height20.1 mm
Length16.2 mm
SeriesFDA20N50_F109
Transistor Type1 N-Channel
Width5 mm
BrandON Semiconductor / Fairchild
Fall Time105 ns
Product TypeMOSFET
Rise Time375 ns
Factory Pack Quantity450
SubcategoryMOSFETs
Typical Turn Off Delay Time100 ns
Typical Turn On Delay Time95 ns
Part # AliasesFDA20N50_F109
Unit Weight0.225789 oz
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDA20N50-F109 MOSFET 500V NCH
ON Semiconductor
ON Semiconductor
FDA20N50-F109 MOSFET N-CH 500V 22A TO-3P
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