FDA5 stock, FDA5, FDA50N50


PartNumber	FDA50N50	FDA59N30	FDA59N25
Description	MOSFET 500V NCH MOSFET	MOSFET 500V NCH MOSFET	MOSFET N-CH 250V 59A TO-3P
Manufacturer	ON Semiconductor	ON Semiconductor	FCS
Product Category	MOSFET	MOSFET	FETs - Single
RoHS	Y	Y	-
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-3PN-3	TO-3PN-3	-
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	500 V	300 V	-
Id Continuous Drain Current	48 A	59 A	-
Rds On Drain Source Resistance	105 mOhms	56 mOhms	-
Vgs Gate Source Voltage	20 V	30 V	-
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	625 W	500 W	-
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Tube	Tube	Tube
Height	20.1 mm	20.1 mm	-
Length	16.2 mm	16.2 mm	-
Series	FDA50N50	FDA59N30	-
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Width	5 mm	5 mm	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	-
Fall Time	230 ns	200 ns	170 ns
Product Type	MOSFET	MOSFET	-
Rise Time	360 ns	575 ns	480 ns
Factory Pack Quantity	450	450	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	225 ns	120 ns	90 ns
Typical Turn On Delay Time	105 ns	140 ns	70 ns
Unit Weight	0.225789 oz	0.225789 oz	0.225789 oz
Part # Aliases	-	FDA59N30_NL	-
Package Case	-	-	TO-3P-3
Pd Power Dissipation	-	-	392 W
Vgs Gate Source Voltage	-	-	30 V
Id Continuous Drain Current	-	-	59 A
Vds Drain Source Breakdown Voltage	-	-	250 V
Rds On Drain Source Resistance	-	-	49 mOhms
Forward Transconductance Min	-	-	45 S

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