FDB

FDB3682 vs FDB38N30U vs FDB3672-F085

 
PartNumberFDB3682FDB38N30UFDB3672-F085
DescriptionMOSFET 100V N-Channel Pwr TrenchMOSFET UF 300V 120MOHM U DPAKMOSFET 100V 44A N-Channel PowerTrench
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V300 V100 V
Id Continuous Drain Current32 A38 A7.2 A
Rds On Drain Source Resistance32 mOhms103 mOhms28 mOhms
Vgs Gate Source Voltage20 V30 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 175 C
Pd Power Dissipation95 W313 W120 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenamePowerTrenchUniFET FRFETUltraFET
PackagingReelReelReel
Height4.83 mm4.83 mm4.83 mm
Length10.67 mm10.67 mm10.67 mm
SeriesFDB3682FDB38N30UFDB3672_F085
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeMOSFET--
Width9.65 mm9.65 mm9.65 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Fall Time32 ns62 ns44 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time46 ns80 ns59 ns
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time26 ns133 ns26 ns
Typical Turn On Delay Time9 ns33 ns11 ns
Part # AliasesFDB3682_NL-FDB3672_F085
Unit Weight0.046296 oz0.046296 oz0.046296 oz
Vgs th Gate Source Threshold Voltage-5 V-
Qg Gate Charge-56 nC-
Forward Transconductance Min-30 S-
Qualification--AEC-Q101
  • 從...開始
  • FDB 624
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB52N20TM MOSFET 200V N-Ch MOSFET
FDB3682 MOSFET 100V N-Channel Pwr Trench
FDB44N25TM MOSFET 250V N-Ch MOSFET
FDB38N30U MOSFET UF 300V 120MOHM U DPAK
FDB3672-F085 MOSFET 100V 44A N-Channel PowerTrench
FDB390N15A MOSFET 150V NCHAN PwrTrench
FDB4020P MOSFET P-Ch Spec Enhance MODE FIELD EFFECT
FDB42AN15A0-F085 MOSFET NMOS D2PAK 150V 42 MOHM
FDB5690 MOSFET 60V N-Channel Power Trench
ON Semiconductor
ON Semiconductor
FDB390N15A Darlington Transistors MOSFET 150V NCHAN PwrTrench
FDB3672-F085 MOSFET N-CH 100V 44A D2PAK
FDB3682 MOSFET N-CH 100V 6A TO-263AB
FDB3860 MOSFET N-CH 100V 6.4A D2PAK
FDB38N30U MOSFET N CH 300V 38A D2PAK
FDB4020P MOSFET P-CH 20V 16A TO-263AB
FDB42AN15A0 MOSFET N-CH 150V 35A TO-263AB
FDB42AN15A0-F085 MOSFET N-CH 150V 35A TO-263AB
FDB44N25TM MOSFET N-CH 250V 44A D2PAK
FDB52N20TM MOSFET N-CH 200V 52A D2PAK
FDB5645 MOSFET N-CH 60V 80A TO-263AB
FDB5690 MOSFET N-CH 60V 32A TO-263AB
FDB42AN15A0_F085 IGBT Transistors MOSFET NOT AVAILABLE THROUGH MOUSER
FDB3672-NL 全新原裝
FDB3672_F085 N-CHANNEL POWERTRENCH MOSFET
FDB3682-NL 全新原裝
FDB3G32 全新原裝
FDB3N40 全新原裝
FDB4020PTM-NL 全新原裝
FDB4030L - Bulk (Alt: FDB4030L)
FDB40AN06LA0 全新原裝
FDB418/183-05-K2 全新原裝
FDB42AN 全新原裝
FDB42AN15AO 全新原裝
FDB42AN15_F085 全新原裝
FDB44N10 全新原裝
FDB44N25 全新原裝
FDB46N15 全新原裝
FDB4N60 全新原裝
FDB52N20 全新原裝
FDB52N20 52N20 52A 200 全新原裝
FDB52N20TM-NL 全新原裝
FDB54N20 全新原裝
FDB55N06 全新原裝
FDB5645-NL 全新原裝
FDB5680 Power Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FDB5685 全新原裝
FDB5686 全新原裝
FDB5690-NL 全新原裝
FDB44N25TM-CUT TAPE 全新原裝
FDB52N20TM-CUT TAPE 全新原裝
Top